BFS17W Datasheet, PDF (3/5 Pages) NXP Semiconductors – NPN 1 GHz wideband transistor

BFS 17W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
AC Characteristics of any single Transistor
Transition frequency
f_T
I_C = 2 mA, V_CE = 5 V, f = 200 MHz
1
I_C = 25 mA, V_CE = 5 V, f = 200 MHz
1.3
Collector-base capacitance
C_cb
V_CB = 5 V, V_BE = v_be = 0 , f = 1 MHz
-
Collector-emitter capacitance
C_ce
V_CE = 5 V, V_BE = v_be = 0 , f = 1 MHz
-
Input capacitance
C_ibo
V_EB = 0.5 V, I_C = 0 , f = 1 MHz
-
Output capacitance
C_obs
V_CE = 5 V, V_BE = v_be = 0 , f = 1 MHz
-
Noise figure
F
I_C = 2 mA, V_CE = 5 V, f = 800 MHz
Z_S = 0 Ω
-
Transducer gain
|S_21e|²
I_C = 20 mA, V_CE = 5 V, f = 500 MHz
Z_S = 50 Ω
-
Linear output voltage
V₀₁=V₀₂
I_C = 14 mA, V_CE = 5 V, d_im = 60 dB
f₁ = 806 MHz, f₂ = 810 MHz, Z_S =Z_L= 50 Ω
-
Third order intercept point
IP₃
I_C = 200 mA, V_CE = 8 V, f = 900 MHz
Z_S =Z_L= 50 Ω
-
1.4
2.5
0.6
0.26
1.45
-
3.5
12.7
100
23
max.
-
-
0.8
-
-
1.5
5
-
-
-
Unit
GHz
pF
dB
mV
dBm
Semiconductor Group
3
Nov-28-1996