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| BFS17W Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN 1 GHz wideband transistor | |||
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BFS 17W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics of any single Transistor
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 25 V, IE = 0
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
DC current gain
IC = 2 mA, VCE = 1 V
IC = 25 mA, VCE = 1 V
Collector-emitter saturation voltage
IC = 10 mA, IB = 1 mA
V(BR)CEO
15
ICBO
-
-
IEBO
-
hFE
20
20
VCEsat
-
V
-
-
µA
-
0.05
-
10
-
100
-
-
150
70
-
V
0.1
0.4
Semiconductor Group
2
Nov-28-1996
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