BFR93P Datasheet, PDF (3/9 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)

BFR 93P
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 30 mA, VCE = 5 V, f = 200 MHz
IC = 50 mA, VCE = 5 V, f = 200 MHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Noise figure
IC = 10 mA, VCE = 8 V, f = 10 MHz,ZS = 75 Ω
IC = 5 mA, VCE = 8 V, f = 500 MHz,ZS = ZSopt
IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω
Power gain
IC = 25 mA, VCE = 8 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Transducer gain
IC = 25 mA, VCE = 8 V, f = 500 MHz, Z0 = 50 Ω
Linear output voltage
two-tone intermodulation test
IC = 25 mA, VCE = 8 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω
Third order intercept point
IC = 25 mA, VCE = 8 V, f = 800 MHz
fT
–
–
Ccb
–
Cce
–
Cibo
–
Cobs
–
F
–
–
–
Gpe
–
I S21e I ² –
Vo1 = Vo2 –
IP3
–
5
–
4.7 –
GHz
0.6 0.75 pF
0.28 –
2.1 –
0.9 –
dB
1.7 –
1.9 –
2.4 –
13 –
15.8 –
240 –
mV
30.5 –
dBm