BFR93P Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)

BFR 93P
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 20 V, IE = 0
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
DC current gain
IC = 25 mA, VCE = 5 V
Collector-emitter saturation voltage
IC = 50 mA, IB = 5 mA
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 15
ICB0
–
–
IEB0
–
hFE
30
VCEsat
–
–
–
V
µA
–
0.05
–
10
–
100
100 –
–
0.2 0.5 V