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BCP72 Datasheet, PDF (3/3 Pages) Siemens Semiconductor Group – PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain)
BCP 72
DC current gain hFE = f (IC)
VCE = 2V
10 3
-
hFE
10 2
100°C
25°C
-50°C
10 1
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 4
mA
IC 10 3
10 2
100°C
25°C
-50°C
10 1
10 0
10 0
10 1
10 2
10 3 mA
IC
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 4
mA
IC 10 3
10 2
-50°C
25°C
100°C
10 0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V 0.50
VCEsat
Collector current IC = f (VBE)
VCE = 2V
10 4
mA
IC 10 3
-50°C
25°C
10 2
100°C
10 1
10 1
10 0
0.0 0.2 0.4 0.6 0.8 1.0 V 1.3
VBEsat
Semiconductor Group
3
10 0
0.0 0.2 0.4 0.6 0.8 1.0 V 1.3
VBE
Dec-04-1996