BCP72 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain)

BCP 72
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 100 µA, I_B = 0
Base-emitter breakdown voltage
I_E = 10 µA, I_C = 0
Collector cutoff current
V_CB = 15 V, I_E = 0 , T_A = 25 °C
V_CB = 15 V, I_E = 0 , T_A = 150 °C
Emitter cutoff current
V_EB = 4 V, I_C = 0
DC current gain
I_C = 10 mA, V_CE = 5 V
I_C = 500 mA, V_CE = 1 V
I_C = 1 A, V_CE = 2 V
Collector-emitter saturation voltage 1)
I_C = 2 A, I_B = 0.2 A
Base-emitter saturation voltage 1)
I_C = 2 A, I_B = 0.2 A
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 10 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
V_(BR)CEO
15
V_(BR)CBO
15
V_(BR)EBO
5
I_CBO
-
-
I_EBO
-
h_FE
25
85
50
V_CEsat
-
V_BEsat
-
f_T
-
C_cb
-
-
-
-
-
-
-
-
-
-
0.15
-
100
50
max.
-
-
-
100
20
100
-
475
-
-
1.2
-
-
Unit
V
nA
µA
nA
-
V
mV
MHz
pF
Semiconductor Group
2
Dec-04-1996