BC857S Datasheet, PDF (3/6 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

BC 857S
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ.
AC Characteristics per Transistor
Transition frequency
I_C = 20 mA, V_CE = 5 V, f = 100 MHz
f_T
-
250
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_cb
-
3
C_eb
-
10
Short-circuit input impedance
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
Open-circuit reverse voltage transfer ratio
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
Short-circuit forward current transfer ratio
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
h_11e
h_12e
h_21e
-
4.5
-
2
-
330
Open-circuit output admittance
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
h_22e
-
30
max.
-
-
-
-
-
-
-
Unit
MHz
pF
kΩ
10^-4
-
µS
Semiconductor Group
3
May-12-1998