BC857S Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

PNP Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two ( galvanic) internal isolated Transistors
with high matching in one package
BC 857S
Type
BC 857S
Marking Ordering Code
3Cs
Q62702-C2373
Pin Configuration
1/4=E1/E2 2/5=B1/B2
Package
3/6=C2/C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation, T_S = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient ¹⁾
Junction - soldering point
Symbol
V_CEO
V_CBO
V_CES
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
R_thJA
R_thJS
Value
45
50
50
5
100
200
250
150
- 65...+150
≤275
≤140
Unit
V
mA
mW
°C
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm ² Cu
Semiconductor Group
1
May-12-1998