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BBY58-03W Datasheet, PDF (3/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
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BBY 58-03W
Diode capacitance CT = f (VR)
f = 1MHz
Temperature coefficient of the diode
capacitance TCc = f (VR)
32
pF
CT 24
20
16
10 -2
1/°C
TCc
10 -3
12
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
VR
10 -4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VR
Normalized diode capacitance
C(TA) / C(25°C)= f (TA)
f = 1MHz, VR = Parameter
1.04
-
CTA 1.02
1V
/C25°C
4V
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-30 -10
10
30
50
70 °C 100
TA
SSeemmicioconndduuctcotor rGGrorouupp
33
Au 1-09938-1-1919-081