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| BBY58-03W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) | |||
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BBY 58-03W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
IR
-
-
1 nA
IR
-
- 100
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
CT
pF
17.5 18.3 19.3
- 12.35 -
-
8.6
-
5.5
6
6.6
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
CT1/CT3
-
2.15
--
CT1/CT4 2.8 3.05 3.3
rs
- 0.25 - â¦
CC
- 0.09 - pF
Ls
-
0.6
- nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Au 1-09938-1-1919-081
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