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SMBTA13 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors | |||
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Electrical Characteristics
at TA = 25 ËC, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 10 µA
Collector-base breakdown voltage
IC = 10 µA
Emitter-base breakdown voltage
IE = 10 µA
Collector-base cutoff current
VCB = 30 V
Emitter-base cutoff current
VEB = 10 V
DC current gain
IC = 10 mA, VCE = 5 V1)
IC = 100 mA, VCE = 5 V1)
SMBTA 13
SMBTA 14
SMBTA 13
SMBTA 14
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
SMBTA 13
SMBTA 14
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 30
â
V(BR)CB0 30
â
V(BR)EB0 10
â
ICB0
â
â
IEB0
â
â
hFE
VCEsat
5000 â
10000 â
10000 â
20000 â
â
â
VBEsat
â
â
â
V
â
â
100 nA
100
â
â
â
â
â
1.5 V
2
fT
125 â
â
MHz
1) Pulse test conditions: t ⤠300 µs, D = 2 %.
Semiconductor Group
2
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