SMBTA13 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors
q High DC current gain
q High collector current
q Collector-emitter saturation voltage
SMBTA 13
SMBTA 14
Type
SMBTA 13
SMBTA 14
Marking
s1M
s1N
Ordering Code
(tape and reel)
Q68000-A6475
Q68000-A6476
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 81 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Rth JA
Rth JS
Pin Configuration
1
2
3
B
E
C
Package¹⁾
SOT-23
Values
Unit
30
V
30
10
300
mA
500
100
200
330
mW
150
˚C
– 65 … + 150
≤ 280
K/W
≤ 210
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91