SMBT2222 Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – NPN Silicon Switching Transistors

SMBT 2222
SMBT 2222 A
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
IC = 10 mA
SMBT 2222
30
–
SMBT 2222 A
40
–
Collector-base breakdown voltage
V(BR)CB0
IC = 10 µA
SMBT 2222
60
–
SMBT 2222 A
75
–
Emitter-base breakdown voltage
V(BR)EB0
IE = 10 µA
SMBT 2222
5
–
SMBT 2222 A
6
–
Collector cutoff current
VCB = 50 V
VCB = 60 V
VCB = 50 V, TA = 150 ˚C
VCB = 60 V, TA = 150 ˚C
ICB0
SMBT 2222
–
–
SMBT 2222 A
–
–
SMBT 2222
–
–
SMBT 2222 A
–
–
Emitter cutoff current
VEB = 3 V
IEB0
–
–
DC current gain
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V¹⁾
IC = 150 mA, VCE = 1 V¹⁾
IC = 150 mA, VCE = 10 V¹⁾
IC = 500 mA, VCE = 10 V¹⁾
IC = 10 mA, VCE = 10 V,
TA = 55 ˚C
hFE
SMBT 2222
SMBT 2222 A
SMBT 2222 A
35
–
50
–
75
–
50
–
100 –
30
–
40
–
35
–
Collector-emitter saturation voltage¹⁾
VCEsat
IC = 150 mA, IB = 15 mA
SMBT 2222
–
–
SMBT 2222 A
–
–
IC = 500 mA, IB = 50 mA
SMBT 2222
–
–
SMBT 2222 A
–
–
Base-emitter saturation voltage¹⁾
VBEsat
IC = 150 mA, IB = 15 mA
SMBT 2222
–
–
SMBT 2222 A
0.6 –
IC = 500 mA, IB = 50 mA
SMBT 2222
–
–
SMBT 2222 A
–
–
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
V
–
–
–
–
–
–
10 nA
10 nA
10
µA
10
µA
10 nA
–
–
–
–
–
300
–
–
–
V
0.4
0.3
1.6
1.0
1.3
1.2
2.6
2.0
Semiconductor Group
2