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SMBT2222 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon Switching Transistors
NPN Silicon Switching Transistors
q High DC current gain: 0.1 mA to 500 mA
q Low collector-emitter saturation voltage
q Complementary types: SMBT 2907,
SMBT 2907 A (PNP)
SMBT 2222
SMBT 2222 A
Type
Marking
SMBT 2222 s1B
SMBT 2222 A s1P
Ordering Code
(tape and reel)
Q68000-A6481
Q68000-A6473
Pin Configuration
1
2
3
B
E
C
Package1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation, TS = 77 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
Values
Unit
SMBT 2222 SMBT 2222 A
VCE0
30
40
V
VCB0
60
75
VEB0
5
6
IC
600
mA
Ptot
330
mW
Tj
150
˚C
Tstg
– 65 … + 150
Rth JA
Rth JS
≤ 290
K/W
≤ 220
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91