HYB5118165BSJBST-50- Datasheet, PDF (2/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k Refresh

HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M × 16 EDO-DRAM
The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized
as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate
process technology, as well as advanced circuit techniques to provide wide operating margins, both
internally and for the system user. Multiplexed address inputs permit the HYB 5(3)18165 to be
packaged in a standard SOJ-42 and TSOPII-50/44 plastic package with 400 mil width. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.
Ordering Information
Type
Ordering Code Package
Descriptions
HYB 5118165BSJ-50 Q67100-Q1107 P-SOJ-42-1 400 mil
5 V 50 ns EDO-DRAM
HYB 5118165BSJ-60 Q67100-Q1108 P-SOJ-42-1 400 mil
5 V 60 ns EDO-DRAM
HYB 3118165BSJ-50 on request
P-SOJ-42-1 400 mil
3.3 V 50 ns EDO-DRAM
HYB 3118165BSJ-60 on request
P-SOJ-42-1 400 mil
3.3 V 60 ns EDO-DRAM
HYB 5118165BST-50 on request
P-TSOPII-50/44-1 400 mil 5 V 50 ns EDO-DRAM
HYB 5118165BST-60 on request
P-TSOPII-50/44-1 400 mil 5 V 60 ns EDO-DRAM
HYB 3118165BST-50 on request
P-TSOPII-50/44-1 400 mil 3.3 V 50 ns EDO-DRAM
HYB 3118165BST-60 on request
P-TSOPII-50/44-1 400 mil 3.3 V 60 ns EDO-DRAM
Semiconductor Group
2
1998-10-01