HYB5118165BSJBST-50- Datasheet, PDF (1/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k Refresh

1M × 16-Bit Dynamic RAM
1k Refresh
(Hyper Page Mode-EDO)
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode-EDO-operation
• Performance:
t_RAC RAS access time
t_CAC CAS access time
t_AA Access time from address
t_RC Read/Write cycle time
t_HPC Hyper page mode (EDO) cycle time
-50 -60
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
• Power Dissipation, Refresh & Addressing:
Power Supply
Addressing
Refresh
Active
TTL Standby
CMOS Standby
HYB5118165 HYB3118165
-50 -60 -50 -60
5 V ± 10 %
3.3 V ± 0.3 V
10/10
10/10
1024 cycles / 16 ms
715 632 468 414 mW
11
7.2
mW
5.5
3.6
mW
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-42-1
400 mil
P-TSOPII-50/44-1 400 mil
Semiconductor Group
1
1998-10-01