HYB5116160BSJ-50 Datasheet, PDF (2/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM

HYB 5116160BSJ-50/-60/-70
1M x 16-DRAM
The HYB 5116160BSJ is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The
HYB 5116160BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced
circuit techniques to provide wide operating margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 5116160BSJ to be packaged in a standard SOJ 42
400 mil plastic package. These packages provide high system bit densities and are compatible with
commonly used automatic testing and insertion equipment. System-oriented features include single
+ 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as
Schottky TTL.
Ordering Information
Type
HYB 5116160BSJ-50
HYB 5116160BSJ-60
HYB 5116160BSJ-70
Ordering Code
on request
on request
on request
Package
Descriptions
P-SOJ-42-1 400 mil DRAM (access time 50 ns)
P-SOJ-42-1 400 mil DRAM (access time 60 ns)
P-SOJ-42-1 400 mil DRAM (access time 70 ns)
Pin Names
A0 to A11
A0 to A7
RAS
OE
I/O1-I/O16
UCAS
LCAS
WE
V_CC
V_SS
N.C.
Row Address Inputs
Column Addess Inputs
Row Address Strobe
Output Enable
Data Input/Output
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
Power Supply (+ 5 V)
Ground (0 V)
not connected
Semiconductor Group
2