HYB5116160BSJ-50 Datasheet, PDF (13/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM

HYB 5116160BSJ-50/-60/-70
1M x 16-DRAM
V
RAS
IH
VIL
V
IH
UCAS
LCAS
VIL
V
IH
Address
VIL
V
IH
WE
VIL
V
IH
OE
VIL
V
I/O1-I/O16 ^IH
(Inputs) _VIL
V
I/O1-I/O16 ^OH
(Outputs) _VOL
tRC
tRAS
tRP
tRCD
tCSH
tRSH
tCAS
tASR
tRAD
tASC
tRAL
tCAH
Row
Address
t_RAH
Column
Address
tCWL
tRWL
tWP
tCRP
tASR
.
Row
Address
tOEH
tDZO
tDZC
tODD
tDS ^tDH
tOEZ
tCLZ
tOEA
Hi-Z
Valid Data
Hi-Z
“H” or “L”
Write Cycle (OE Controlled Write)
Semiconductor Group
13