HYB3164805AJ Datasheet, PDF (2/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
This HYB3164(5)805A is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is
fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)805A operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB
3164(5)805A to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.The HYB3164(5)805ATL parts have a very low power „sleep mode“
supported by Self Refresh.
Ordering Information
Type
8k-refresh versions:
HYB 3164805AJ-40
HYB 3164805AJ-50
HYB 3164805AJ-60
HYB 3164805AT-40
HYB 3164805AT-50
HYB 3164805AT-60
HYB 3164805ATL-50
HYB 3164805ATL-60
4k-refresh versions:
HYB 3165805AJ-40
HYB 3165805AJ-50
HYB 3165805AJ-60
HYB 3165805AT-40
HYB 3165805AT-50
HYB 3165805AT-60
HYB 3165805ATL-50
HYB 3165805ATL-60
Ordering
Code
Package
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
Descriptions
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
Semiconductor Group
2