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HYB3164805AJ Datasheet, PDF (1/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM | |||
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8M x 8-Bit Dynamic RAM
(4k & 8k Refresh, EDO-Version)
HYB 3164805AJ/AT(L) -40/-50/-60
HYB 3165805AJ/AT(L) -40/-50/-60
Advanced Information
⢠8 388 608 words by 8-bit organization
⢠0 to 70 °C operating temperature
⢠Hyper Page Mode - EDO - operation
⢠Performance:
-40 -50 -60
tRAC RAS access time
40
50
60
ns
tCAC CAS access time
10
13
15
ns
tAA Access time from address 20
25
30
ns
tRC Read/write cycle time
69
84
104 ns
tHPC Hyper page mode (EDO) 16
20
25
ns
cycle time
⢠Single + 3.3 V (± 0.3V) power supply
⢠Low power dissipation:
max. 450 active mW ( HYB 3164805AJ/AT(L)-40)
max. 360 active mW ( HYB 3164805AJ/AT(L)-50)
max. 324 active mW ( HYB 3164805AJ/AT(L)-60)
max. 612 active mW ( HYB 3165805AJ/AT(L)-40)
max. 468 active mW ( HYB 3165805AJ/AT(L)-50)
max. 432 active mW ( HYB 3165805AJ/AT(L)-60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVMOS)
720 µA standby for L-version
⢠Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
⢠Self refresh (L-version only)
⢠8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805AJ/AT)
⢠256 msec refresh period for L-versions
⢠Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)805AJ
P-TSOPII-32-1 400 mil
HYB 3164(5)805AT(L)
Semiconductor Group
1
6.97
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