FP201L100 Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – Differential Magnetoresistive Sensor

FP 201 L 100
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation¹⁾
Supply voltage²⁾
Insulation voltage between
terminals and casing
Thermal conductivity
Symbol
T_A
T_stg
P_tot
V_IN
V_I
G_thcase
G_thA
Value
Unit
– 25 / + 100 °C
– 25 / + 110 °C
600
mW
10
V
> 100
V
≥ 10
mW/K
≥5
mW/K
Characteristics (T_A = 25 °C)
Nominal supply voltage
Total resistance, (δ = ∞, I ≤ 1 mA)
Center symmetry³⁾ (δ = ∞)
Offset voltage⁴⁾
(at V_{IN N} and δ = ∞)
Open circuit output voltage⁵⁾
(V_{IN N} and δ = 0.5 mm)
Cut-off frequency
V_{IN N}
R_1-3
M
V₀
V_{out pp}
f_c
5
V
700…1400 Ω
≤ 10
%
≤ 130
mV
> 2.2
V
>7
kHz
This sensor is operated by a permanent magnet. Using the arrangement as shown in
Fig. 1, the permanent magnet increases the internal biasing field through the righthand
side magneto resistor (connections 2-3), and reduces the field through the left side
magneto resistor (connections 1-2). As a result the resistance value of MR_2-3 increases
while that of MR_1-2 decreases. When the permanent magnet is moved from left to right
the above-mentioned process operates in reverse.
1) Corresponding to diagram P_tot = f(T_case)
2) Corresponding to diagram V_IN = f(T)
3)
M = ^R----¹----^–----²----–----^R----²----^–----³-
R_{1 – 2}
× 100% for R_1-2 > R_2-3
4) Corresponding to measuring circuit in Fig. 3
5) Corresponding to measuring circuit in Fig. 3 and arrangement as shown in Fig. 2
Semiconductor Group
2