FP201L100 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Differential Magnetoresistive Sensor

Differential Magnetoresistive Sensor
FP 201 L 100
Features
• Extremely high output
voltage
• 2 independently biased
magnetic circuits
• Robust housing
• Signal amplitude
independent of operating
speed
• Screw mounting possible
Typical applications
• Detection of speed
• Detection of position
• Detection of sense of rotation
Dimensions in mm
Type
FP 201 L 100
Ordering Code
Q65210-L101
The differential magnetoresistive sensor FP 201 L 100 consists of two magnetically
biased magneto resistors made from L-type InSb/NiSb, which in their unbiased state
each have a basic resistance of about 125 Ω. They are series coupled as a voltage
divider and are encapsuled in plastic as protection against mechanical stresses. This
magnetically actuated sensor can be implemented as a direction dependent contactless
switch where it shows a voltage change of about 1.3 V/mm in its linear region.
Semiconductor Group
1
07.96