CNY17F Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER

Current Transfer Ratio (I_C/I_F at V_CE=5 V, 25°C)
and Collector-Emitter Leakage Current by dash number
-1
-2
-3
-4
Unit
I_C/I_F at V_CE=5 V
(I_F=10 mA)
I_C/I_F at V_CE=5 V
(I_F=1 mA)
Collector-Emitter
Leakage Current
(V_CE=10 V) (I_CEO)
40–80 63-125 100–200 160–320 %
30 (>13) 45 (>22) 70 (>34) 90 (>56) %
2 (≤ 50) 2 (≤ 50) 5 (≤ 100) 5 (≤ 100) nA
Figure 1. Linear operation (without saturation)
I_F
R_L=75 Ω
I_C
V_CC=5 V
47 Ω
I_F=10 mA, V_CC=5 V, T_A=25°C
Load Resistance
R_L
75
Ω
Turn-On Time
t_ON
3.0
µs
Rise Time
t_R
2.0
µs
Turn-Off Time
t_OFF
2.3
µs
Fall Time
t_f
2.0
µs
Cut-Off Frequency f_CO
250
kHz
Figure 2. Switching operation (with saturation)
I_F
1 KΩ
V_CC=5 V
47 Ω
-1
-2 and -3
-4
(I_F=20 mA) (I_F=10 mA) (I_F=5 mA)
Turn-On Time t_ON
3.0
4.2
6.0
µs
Rise Time
t_R
2.0
3.0
4.6
µs
Turn-Off Time t_OFF
18
23
25
µs
Fall Time
t_F
11
14
15
µs
Figure 3. Current transfer ratio versus diode
current (T_A=–25°C, V_CE=5 V) I_C/I_F=f (I_F)
Figure 4. Current transfer ratio versus diode
current (T_A=0°C, V_CE=5 V) I_C/I_F=f (I_F)
Figure 5. Current transfer ratio versus diode
current (T_A=25°C, V_CE=5 V) I_C/I_F=f (I_F)
CNY17F
5–2