CNY17F Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER

FEATURES
• High Current Transfer Ratio
CNY17F-1, 40-80%
CNY17F-2, 63-125%
CNY17F-3, 100-200%
CNY17F-4, 160-320%
• Breakdown Voltage, 5300 VAC_RMS
• High Collector-Emitter Voltage
• V_CEO=70 V
• No Base Terminal Connection for Improved
Common Mode Interface Immunity
• Field-Effect Stable by TRIOS*
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
•
V
DE
VDE #0884, Available with Option 1
Maximum Ratings (T_A=25°C)
Emitter
Reverse Voltage ................................................ 6 V
DC Forward Current .................................... 60 mA
Surge Forward Current (t ≤10 µs) ...................2.5 A
Total Power Dissipation ............................ 100 mW
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ..........................................50 mA
Collector Current (t≤1 ms) ......................... 100 mA
Total Power Dissipation ............................ 150 mW
Package
Isolation Test Voltage (between emitter and detector
referred to standard climate 23/50
DIN 50014) .................................... 5300 VAC_RMS
Creepage .................................................... >7 mm
Clearance................................................... >7 mm
Isolation Thickness between Emitter
and Detector......................................... ≥0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ...................... 175
Isolation Resistance (V₁₀=500 V) .................≥10¹¹ Ω
Storage Temperature Range ............–55 to +150°C
Ambient Temperature Range ...........–55 to +100°C
Junction Temperature ................................... 100°C
Soldering Temperature
(max. 10 s, dip soldering:
distance to seating plane ≥1.5 mm) .......... 260°C
*TRIOS—TRansparent IOn Shield
CNY17F SERIES
PHOTOTRANSISTOR
NO BASE CONNECTION
OPTOCOUPLER
Dimensions in inches (mm)
Pin One ID
321
Anode ₁
.248 (6.30)
.256 (6.50)
Cathode ₂
6 Base
5 Collector
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
NC ₃
4 Emitter
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
DESCRIPTION
The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared
emitting diode optically coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission between two
electrically separated circuits. The potential difference between the cir-
cuits to be coupled is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of the F type is not
connected, resulting in a substantially improved common-mode interfer-
ence immunity.
Characteristics (T_A=25°C)
Symbol
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
V_F
V_BR
I_R
C_O
R_thJA
Capacitance
C_CE
Unit
1.25 (≤1.65) V
≥≥≥6
V
0.01 (≤10) µA
25
pF
750
K/W
5.2
pF
Thermal Resistance
Package
Saturation Voltage,
Collector-Emitter
Coupling
Capacitance
R_thJA
V_CEsat
C_C
500
K/W
0.25 (≤0.4) V
0.6
pF
Condition
I_F=60mA
I_R=10µA
V_R=6 V
V_R=0 V, f=1 MHz
V_CE=5 V, f=1
MHz
I_F=10 mA
I_C=2.5 mA
5–1