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| BUZ171 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | |||
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BUZ 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = -50 V, VGS = 0 V, Tj = 25 °C
VDS = -50 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-Source on-resistance
VGS = -10 V, ID = -5 A
Symbol
min.
V(BR)DSS
-50
VGS(th)
-2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
Unit
typ.
max.
V
-
-
-3
-4
µA
-0.1
-1
-10
-100
nA
-10
-100
â¦
0.25
0.3
Semiconductor Group
2
07/96
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