BUZ171 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

BUZ 171
SIPMOS ^® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 171
V_DS
I_D
-50 V -8 A
R_DS(on)
0.3 Ω
Maximum Ratings
Parameter
Continuous drain current
T_C = 30 °C
Pulsed drain current
T_C = 25 °C
Avalanche energy, single pulse
I_D = -8 A, V_DD = -25 V, R_GS = 25 Ω
L = 1.1 mH, T_j = 25 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
I_D
I_Dpuls
E_AS
V_GS
P_tot
T_j
T_stg
R_thJC
R_thJA
Ordering Code
C67078-S1450-A2
Values
Unit
A
-8
-32
mJ
70
± 20
V
W
40
-55 ... + 150 °C
-55 ... + 150
≤ 3.1
K/W
≤ 75
E
55 / 150 / 56
Semiconductor Group
1
07/96