BTS112A Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

BTS 112A
Electrical Characteristics
at T_j = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
V_GS = 0, I_D = 0.25 mA
Gate threshold voltage
V_GS = V_DS, I_D = 1.0 mA
Zero gate voltage drain current
V_GS = 60 V, V_DS = 0
T_j = 25 °C
T_j = 150 °C
Gate-source leakage current
V_GS = ± 20 V, V_DS = 0
T_j = 25 °C
T_j = 150 °C
Drain-source on-state resistance
V_GS = 10 V, I_D = 7.5 A
V_(BR)DSS
60
V_GS(th)
2.5
I _DSS
–
–
I _GSS
–
–
R_DS(on)
–
Dynamic Characteristics
Forward transconductance
V_DS ≥ 2 × I_D × R , _DS(on)max I_D = 7.5 A
g_fs
3.0
Input capacitance
V_GS = 0, V_DS = 25 V, f = 1 MHz
C_iss
–
Output capacitance
V_GS = 0, V_DS = 25 V, f = 1 MHz
C_oss
–
Reverse transfer capacitance
V_GS = 0, V_DS = 25 V, f = 1 MHz
C_rss
–
Turn-on time t_on, (t_on = t_d(on) + t_r)
t_d(on)
–
V_CC = 30 V, V_GS = 10 V, I_D = 3 A, R_GS = 50 Ω _{t r}
–
Turn-off time t_off, (t_off = t_d(off) + t_f)
t_d(off)
–
V_CC = 30 V, V_GS = 10 V, I_D = 3 A, R_GS = 50 Ω _tf
–
Values
Unit
typ.
max.
V
–
–
3.0
3.5
µA
0.1
1.0
10
100
10
100
nA
2
4
µA
Ω
0.12
0.15
S
5.7
–
pF
360
480
160
250
50
90
15
25
ns
30
45
40
55
55
75
Semiconductor Group
2