BTS112A Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

TEMPFET^®
Features
q N channel
q Enhancement mode
q Temperature sensor with thyristor characteristic
q The drain pin is electricalIy shorted to the tab
BTS 112A
1 ²³
Pin
1
2
3
G
D
S
Type
BTS 112A
V_DS
60 V
I_D
12 A
R_DS(on)
0.15 Ω
Package
TO-220AB
Ordering Code
C67078-S5014-A3
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, R_GS = 20 kΩ
Gate-source voltage
Continuous drain current, T_C = 33 °C
ISO drain current
T_C = 85 °C, V_GS = 10 V, V_DS = 0.5 V
Pulsed drain current, T_C = 25 °C
Short circuit current, T_j = – 55 ... + 150 °C
Short circuit dissipation, T_j = – 55 ... + 150 °C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Symbol
V_DS
V_DGR
V_GS
I_D
I_D-ISO
I_{D puls}
I_SC
P_SCmax
P_tot
T_j, T_stg
–
–
R_{th JC}
R_{th JA}
Values
60
60
± 20
12
2.5
48
27
400
40
– 55 ... + 150
E
55/150/56
≤ 3.1
≤ 75
Unit
V
A
W
°C
–
K/W
Semiconductor Group
1
04.97