BSP319 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated)

BSP 319
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point ¹⁾
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
T_j
T_stg
R_thJA
R_thJS
Values
Unit
-55 ... + 150 °C
-55 ... + 150
≤ 70
K/W
≤ 10
E
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm² copper area for drain connection
Electrical Characteristics, at T_j = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V_GS = 0 V, I_D = 0.25 mA, T_j = 0 °C
Gate threshold voltage
V_GS=V_DS, I_D = 1 mA
Zero gate voltage drain current
V_DS = 50 V, V_GS = 0 V, T_j = 25 °C
V_DS = 50 V, V_GS = 0 V, T_j = 125 °C
Gate-source leakage current
V_GS = 20 V, V_DS = 0 V
Drain-Source on-state resistance
V_GS = 5 V, I_D = 2.4 A
V_(BR)DSS
50
V_GS(th)
1.2
I_DSS
-
-
I_GSS
-
R_DS(on)
-
-
-
1.6
2
0.1
1
10
100
10
100
0.06
0.07
Unit
V
µA
nA
Ω
Semiconductor Group
2
Sep-12-1996