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BSP319 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated)
BSP 319
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
• VGS(th) = 1.2 ...2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G
D
S
D
Type
BSP 319
Type
BSP 319
VDS
50 V
ID
3.8 A
Ordering Code
Q67000-S273
RDS(on)
0.07 Ω
Package
SOT-223
Tape and Reel Information
E6327
Marking
BSP 319
Maximum Ratings
Parameter
Continuous drain current
TA = 29 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = 3.8 A, VDD = 25 V, RGS = 25 Ω
L = 6.2 mH, Tj = 25 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TA = 25 °C
Symbol
ID
IDpuls
EAS
VGS
Vgs
Ptot
Values
Unit
A
3.8
15
mJ
90
± 14
V
± 20
W
1.8
Semiconductor Group
1
Sep-12-1996