BSM200GB120DL Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes)

BSM 200 GB 120 DL
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V_GE(th)
V
V_GE = V_CE, I_C = 8 mA
4.5
5.5
6.5
Collector-emitter saturation voltage
V_CE(sat)
V_GE = 15 V, I_C = 200 A, T_j = 25 °C
-
2.2
2.6
V_GE = 15 V, I_C = 200 A, T_j = 125 °C
-
2.5
3
Zero gate voltage collector current
I_CES
mA
V_CE = 1200 V, V_GE = 0 V, T_j = 25 °C
-
-
10
V_CE = 1200 V, V_GE = 0 V, T_j = 125 °C
-
-
-
Gate-emitter leakage current
I_GES
nA
V_GE = 20 V, V_CE = 0 V
-
-
400
AC Characteristics
Transconductance
g_fs
S
V_CE = 20 V, I_C = 200 A
110
-
-
Input capacitance
C_iss
nF
V_CE = 25 V, V_GE = 0 V, f = 1 MHz
-
13
-
Output capacitance
C_oss
V_CE = 25 V, V_GE = 0 V, f = 1 MHz
-
2
-
Reverse transfer capacitance
C_rss
V_CE = 25 V, V_GE = 0 V, f = 1 MHz
-
1
-
Semiconductor Group
2
Feb-14-1997