BSM200GB120DL Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes)

BSM 200 GB 120 DL
IGBT Power Module
Preliminary data
• Low Loss IGBT
• Low inductance halfbridge
• Including fast free- wheeling diodes
• Package with insulated metal base plate
Type
BSM 200 GB 120 DL
V_CE I_C
Package
1200V 340A HALF-BRIDGE 2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 80 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 80 °C
Power dissipation per IGBT
T_C = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
P_tot
T_j
T_stg
R_thJC
R_thJCD
V_is
-
-
-
-
Ordering Code
C67076-A2300-A70
Values
Unit
1200
V
1200
± 20
A
340
200
680
400
W
1400
+ 150
°C
-40 ... + 125
≤ 0.09
K/W
≤ 0.18
2500
Vac
20
mm
11
F
sec
40 / 125 / 56
Semiconductor Group
1
Feb-14-1997