BFP490 Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (Q62702-F1721)

BFP 490
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 1.5 V, I_C = 0
DC current gain
I_C = 200 mA, V_CE = 3 V
V_(BR)CEO ^4.5
I_CBO
-
I_EBO
-
h_FE
50
AC characteristics
Transition frequency
I_C = 300 mA, V_CE = 3 V, f = 0.2 GHz
I_C = 300 mA, V_CE = 3 V, f = 0.5 GHz
Collector-base capacitance
V_CB = 2 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 2 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
f_T
-
13
C_cb
-
C_ce
-
C_eb
-
F
-
I_C = 100 mA, V_CE = 2 V, Z_S = Z_Sopt ,
f = 1.8 GHz
Power gain ²⁾
G_ma
-
I_C = 200 mA, V_CE = 2 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
Insertion power gain
|S₂₁|²
-
I_C = 200 mA, V_CE = 2 V, f = 0.5 GHz,
Z_S = Z_L = 50Ω
Third order intersept point
IP₃
-
I_C = 300 mA, V_CE = 3 V, Z_S=Z_Sopt , Z_L=Z_Lopt ,
f = 1.8 GHz
1dB Compression point
I_C = 300 mA, V_CE = 3 V, f = 1.8 GHz,
Z_S=Z_Sopt , Z_L=Z_Lopt
P_-1dB
-
5
-V
- 1800 nA
- 400 µA
90
--
GHz
17.5 -
15
-
3.7 4.7 pF
6.3
-
10.5 -
3.3
- dB
9
- dB
8.5
-
35
- dBm
26.5 -
SSeemmicioconndduuctcotor ^rGGrorouupp
2) G_ma = |S₂₁ / S_12| (k-(k2-1)1/2)
2²
Sep-₁0₉9₉₈-1_-19₁9_-08₁