BFP490 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (Q62702-F1721)

NPN Silicon RF Transistor
Preliminary data
• For high power amplifiers
• Compression point P_-1dB = 26.5 dBm at 1.8 GHz
maxim. available Gain G_ma = 9.5 dB at 1.8 GHz
• Transition frequency f_T > 17 GHz
• Gold metalization for high reliability
• SIEGET ^® 25 - Line
Siemens Grounded Emitter Transistor
25 GHz f_T - Line
SIEGET^®25 BFP 490
4
5
3
2
1
VPW05980
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BFP 490 AOs
Q62702-F1721 1 = B 2 = E 3 = C 4 = C 5 = E SCT-595
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T_S ≤ 85 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
Value
Unit
4.5
V
15
1.5
600
mA
60
1000
mW
150
°C
-65 ...+150
-65 ...+150
≤ 65
K/W
1) TS is measured on the emitter lead at the soldering point
mounted on alumina 15 mm x 16,7 mm x 0.7 mm
SSeemmicioconndduuctcotor ^rGGrorouupp
1¹
Sep-₁0₉9₉₈-1_-19₁9_-08₁