BFN22 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

BFN 22
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
Collector-base breakdown voltage
IC = 10 µA
Collector-emitter breakdown voltage
IC = 10 µA, RBE = 2.7 kΩ
Emitter-base breakdown voltage
IE = 10 µA
Collector-base cutoff current
VCB = 200 V
VCB = 200 V, TA = 150 ˚C
Collector cutoff current
VCE = 250 V, RBE = 2.7 kΩ
VCE = 250 V, TA = 150 ˚C, RBE = 2.7 kΩ
Emitter-base cutoff current
VEB = 5 V
DC current gain¹⁾
IC = 25 mA, VCE = 20 V
Collector-emitter saturation voltage¹⁾
IC = 10 mA, IB = 1 mA
Base-emitter saturation voltage¹⁾
IC = 10 mA, IB = 1 mA
AC characteristics
Transition frequency
IC = 10 mA, VCE = 10 V, f = 20 MHz
Output capacitance
VCB = 30 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 250
–
V(BR)CB0 250
–
V(BR)CER 250
–
V(BR)EB0 5
–
ICB0
–
–
–
–
ICER
–
–
–
–
IEB0
–
–
hFE
50
–
VCEsat
–
–
VBEsat
–
–
–
V
–
–
–
100 nA
20
µA
µA
1
50
10
–
–
0.5 V
1
fT
–
Cobo
–
100 –
0.8 –
MHz
pF
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
2