BFN22 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

NPN Silicon High-Voltage Transistor
q Suitable for video output stages in TV sets
and switching power supplies
q High breakdown voltage
q Low collector-emitter saturation voltage
q Low capacitance
q Complementary type: BFN 23 (PNP)
BFN 22
Type
BFN 22
Marking
HBs
Ordering Code
(tape and reel)
Q62702-F1024
Pin Configuration
1
2
3
B
E
C
Package¹⁾
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage, RBE = 2.7 kΩ
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation, TS = 71 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
VCE0
VCB0
VCER
VEB0
IC
ICM
Ptot
Tj
Tstg
Values
Unit
250
V
250
250
5
50
mA
100
360
mW
150
˚C
– 65 … + 150
Rth JA
Rth JS
≤ 290
K/W
≤ 220
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91