BFN17 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

BFN 17
BFN 19
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
BFN 17
BFN 19
Collector-base breakdown voltage
IC = 100 µA
BFN 17
BFN 19
Emitter-base breakdown voltage
IE = 100 µA
Collector-base cutoff current
VCB = 200 V
VCB = 250 V
VCB = 200 V, TA = 150 ˚C
VCB = 250 V, TA = 150 ˚C
BFN 17
BFN 19
BFN 17
BFN 19
Emitter-base cutoff current
VEB = 3 V
DC current gain
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V¹⁾
IC = 30 mA, VCE = 10 V¹⁾
BFN 17
BFN 19
Collector-emitter saturation voltage¹⁾
IC = 20 mA, IB = 2 mA
BFN 17
BFN 19
Base-emitter saturation voltage¹⁾
IC = 20 mA, IB = 2 mA
AC characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 20 MHz
Output capacitance
VCB = 30 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
250 –
300 –
V(BR)CB0
250 –
300 –
V(BR)EB0 5
–
ICB0
–
–
–
–
–
–
–
–
IEB0
–
–
hFE
25
–
40
–
40
–
30
–
VCEsat
–
–
–
–
VBEsat
–
–
V
–
–
–
–
–
100 nA
100 nA
20
µA
20
µA
100 nA
–
–
–
–
–
V
0.4
0.5
0.9
fT
–
Cobo
–
100 –
2.5 –
MHz
pF
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
2