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BFN17 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
PNP Silicon High-Voltage Transistors
q Suitable for video output stages in TV sets
and switching power supplies
q High breakdown voltage
q Low collector-emitter saturation voltage
q Complementary types: BFN 16, BFN 18 (NPN)
BFN 17
BFN 19
Type
BFN 17
BFN 19
Marking
DG
DH
Ordering Code
(tape and reel)
Q62702-F884
Q62702-F1057
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 130 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Rth JA
Rth JS
Pin Configuration
1
2
3
B
C
E
Package1)
SOT-89
Values
Unit
BFN 17 BFN 19
250
300
V
250
300
5
200
mA
500
100
200
1
W
150
˚C
– 65 … + 150
≤ 75
K/W
≤ 20
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91