BCV28 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP Darlington transistors

BCV 28
BCV 48
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BCV 28
BCV 48
Collector-base breakdown voltage
IC = 100 µA
BCV 28
BCV 48
Emitter-base breakdown voltage, IE = 10 µA
Collector cutoff current
VCB = 30 V
VCB = 60 V
VCB = 30 V, TA = 150 ˚C
VCB = 60 V, TA = 150 ˚C
BCV 28
BCV 48
BCV 28
BCV 48
Emitter cutoff current, VEB = 4 V
DC current gain¹⁾
IC = 100 µA, VCE = 1 V
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
IC = 0.5 A, VCE = 5 V
BCV 28
BCV 48
BCV 28
BCV 48
BCV 28
BCV 48
BCV 28
BCV 48
Collector-emitter saturation voltage¹⁾
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage¹⁾
IC = 100 mA; IB = 0.1 mA
V(BR)CE0
30
–
60
–
V(BR)CB0
V(BR)EB0
ICB0
IEB0
hFE
VCEsat
40
–
80
–
10
–
–
–
–
–
–
–
–
–
–
–
4000 –
2000 –
10000 –
4000 –
20000 –
10000 –
4000 –
2000 –
–
–
VBEsat
–
–
V
–
–
–
–
–
100 nA
100 nA
10
µA
10
µA
100 nA
–
–
–
–
–
–
–
–
–
1
V
1.5
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
1) _{Pulse test: t ≤ 300 µs, D = 2 %.}
fT
–
Cobo
–
200 –
4.5 –
MHz
pF
Semiconductor Group
2