BCV28 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP Darlington transistors

PNP Silicon Darlington Transistors
q For general AF applications
q High collector current
q High current gain
q Complementary types: BCV 29, BCV 49 (NPN)
BCV 28
BCV 48
Type
BCV 28
BCV 48
Marking
ED
EE
Ordering Code
(tape and reel)
Q62702-C1852
Q62702-C1854
Pin Configuration
1 234
B CEC
Package¹⁾
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 ˚C
Junction temperature
Storage temperature range
Symbol Values
BCV 28
VCE0
30
VCB0
40
VEB0
10
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BCV 48
60
80
10
500
800
100
200
1
150
– 65 … + 150
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Rth JA
Rth JS
≤ 72
≤ 17
Unit
V
mA
W
˚C
K/W
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91