BCR135S Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

BCR 135S
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO
V
I_C = 100 µA, I_B = 0
50
-
-
Collector-base breakdown voltage
V_(BR)CBO
I_C = 10 µA, I_B = 0
50
-
-
Collector cutoff current
I_CBO
nA
V_CB = 40 V, I_E = 0
-
-
100
Emitter cutoff current
I_EBO
µA
V_EB = 6 V, I_C = 0
-
-
167
DC current gain
h_FE
-
I_C = 5 mA, V_CE = 5 V
70
-
-
Collector-emitter saturation voltage 1) V_CEsat
V
I_C = 10 mA, I_B = 0.5 mA
-
-
0.3
Input off voltage
V_i(off)
I_C = 100 µA, V_CE = 5 V
0.5
-
1
Input on Voltage
V_i(on)
I_C = 2 mA, V_CE = 0.3 V
0.5
-
1.4
Input resistor
R₁
7
10
13
kΩ
Resistor ratio
R₁/R₂
0.19
0.21
0.24 -
AC Characteristics
Transition frequency
f_T
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
-
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
-
1) Pulse test: t < 300µs; D < 2%
150
-
3
-
MHz
pF
Semiconductor Group
2
Nov-26-1996