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BCR135S Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) | |||
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NPN Silicon Digital Transistor Array
⢠Switching circuit, inverter, interface circuit,
driver circuit
⢠Two (galvanic) internal isolated Transistors
in one package
⢠Built in bias resistor (R1=10kâ¦, R2=47kâ¦)
BCR 135S
Type
Marking Ordering Code Pin Configuration
Package
BCR 135S WJs
UPON INQUIRY 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
6
20
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
⤠275
K/W
⤠140
Semiconductor Group
1
Nov-26-1996
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