HYM72V1600GS-50- Datasheet, PDF (16/22 Pages) Siemens Semiconductor Group – 16M x 72-Bit Dynamic RAM Module

HYM72V1600/10GS-50/-60
16M x 72-ECC Module
AC Characteristics (cont’d)(note: 5,6,7,8)
T_A = 0 to 70 °C,V_CC = 3.3 ± 0.3 V
Parameter
Symbol
-50
min. max.
Output buffer turn-off delay from OE t_OEZ
CAS delay time from Din
t_DZC
Data to OE low delay
t_DZO
CAS high to data delay
t_CDD
OE high to data delay
t_ODD
–
18
0
–
0
–
18 –
18 –
-60
min. max.
–
20
0
–
0
–
20 –
20 –
Unit Note
ns 9,17
ns 18
ns 18
ns 9,19
ns 9,19
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
t_WCH
t_WP
t_WCS
t_RWL
t_CWL
t_DS
t_DH
13 –
8
–
2
–
18 –
13 –
-2
–
15 –
15 –
10 –
2
–
20 –
15 –
-2
–
15 –
ns 9
ns
ns 11,20
ns 9
ns
ns 10,21
ns 9,21
Read-Modify-Write Cycle
Read-write cycle time
t_RWC
131 –
RAS to WE delay time
t_RWD
70 –
CAS to WE delay time
t_CWD
33 –
Column address to WE delay time
t_AWD
45 –
OE command hold time
t_OEH
11 –
155 –
82 –
37 –
52 –
13 –
ns 9
ns 11,21
ns 11,21
ns 11,21
ns 10
Fast Page Mode Cycle
Fast page mode cycle time
CAS precharge time
Access time from CAS precharge
RAS pulse width
CAS precharge to RAS Delay
t_PC
35 –
40 –
ns
t_CP
10 –
10 –
ns
t_CPA
–
35 –
40
ns 9,13
t_RAS
50 200k 60 200k ns
t_RHCP
35
–
40 –
ns 9
Semiconductor Group
8