HYM72V1600GS-50- Datasheet, PDF (1/22 Pages) Siemens Semiconductor Group – 16M x 72-Bit Dynamic RAM Module

16M × 72-Bit Dynamic RAM Module
(ECC - Module )
HYM 72V1600GS-50/-60
HYM 72V1610GS-50/-60
Preliminary Information
• 16 777 216 words by 72-bit ECC - mode organization
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 3.3V (± 0.3V) supply
• Low power dissipation
max. 6480 mW active (-50 version)
max. 5832 mW active (-60 version)
CMOS – 108 mW standby
LVTTL – 180 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• 18 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes eighteen 16M × 4 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A
• Two versions : HYM 72V1600GS with TSOPII-components (4 mm thickness)
HYM 72V1610GS with SOJ-components (9 mm thickness)
• 8192 refresh cycles / 128 ms with 13 / 11 addressing
• Gold contact pad
• double sided module with 38.1 mm (1500 mil) height
Semiconductor Group
1
11.95