English
Language : 

TLE4214G Datasheet, PDF (11/16 Pages) Siemens Semiconductor Group – Intelligent Double Low-Side Switch 2 x 0.5 A
TLE 4214 G
Characteristics (cont’d)
VS = 6 to 16 V (typ. VS = 12 V); Tj = – 40 to 150 °C (typ. Tj = 25 °C)
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Switching Stages
Saturation voltage
Saturation voltage
Output current
Leakage current
Switch-ON time
Switch-OFF time
Forward voltage of
substrate diode
Forward voltage of
clamp diode
Leakage current of
clamp diode
VQSat
VQSat
IQ
IQ
tD ON
tD OFF
VQS
VQF
– IQF
– 0.6 0.8 V IQ = 0.5 A; VI > VIH;
VF > VFH
– 45 100 mV IQ = 50 mA; VI > VIH;
VF > VFH
0.5 –
–5 –
A
VQSat = 0.8 V; VI > VIH
50 µA VQ = 6 V; VI < VIL
0.2 0.5 5
0.2 2 5
µs IQ = 0.5 A see Timing
µs IQ = 0.5 A Diagram
– 1.3 1.7 V IQ = – 0.5 A
t < 0.1 s
– 1.3 1.7 V IQ = 0.5 A
t < 0.1 s
––5
µA VQ = 0 V; VI < VIL
Semiconductor Group
304