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HYB3164405AJ Datasheet, PDF (11/29 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM | |||
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HYB3164(5)405AJ/AT(L)-40/-50/-60
16M x 4-DRAM
AC Characteristics (contâd) 5)6)
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns
AC64-2E
Parameter
Symbol
Limit Values
Unit Note
- 40
- 50
- 60
min. max. min. max. min. max.
RAS pulse width in hyper page mode tRAS
40 200k 50 200k 60 200k ns
CAS precharge to RAS Delay
tRHPC 22 â
27 â
32 â
ns
OE pulse width
tOEP
5
â
5
â
5
â
ns
OE hold time from CAS high
tOEHC 5
â
5
â
5
â
ns
Output buffer turn-off delay from WE tWEZ 0 10 0 13 0 15 ns
OE setup time prior to CAS
tOES
5
â
5
â
5
â
ns
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-write tPRWC 44 â 54 â 63 â ns
cycle time
CAS precharge to WE
tCPWD 34 â
42 â
49 â
ns
CAS before RAS Refresh Cycle
CAS setup time
tCSR
5
â
5
â
5
â
ns
CAS hold time
tCHR
5
â
5
â
10 â
ns
RAS to CAS precharge time
tRPC
5â5â5â
ns
Write to RAS precharge time
tWRP
5
â
5
â
10 â
ns
Write hold time referenced to RAS tWRH 5 â 5 â 10 â ns
Self Refresh Cycle (L-versions only)
RAS pulse width
RAS precharge time
CAS hold time
tRASS
tRPS
tCHS
100k
69 â
-50 â
100k _
84 â
-50 â
100k _
104 â
-50 â
ns 17
ns 17
ns 17
Test Mode Cycle
Write command setup time
Write command hold time
tWTS
5
â
5
â
5
â
ns 18
tWTH
5
â
5
â
5
â
ns 18
Semiconductor Group
11
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