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HYB3164405AJ Datasheet, PDF (10/29 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM | |||
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HYB3164(5)405AJ/AT(L)-40/-50/-60
16M x 4-DRAM
AC Characteristics (contâd) 5)6)
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns
AC64-2E
Parameter
Symbol
Limit Values
Unit Note
- 40
- 50
- 60
min. max. min. max. min. max.
Read command hold time
referenced to RAS
tRRH
0
â
0
â
0
â
ns 11
CAS to output in low-Z
tCLZ
Output buffer turn-off delay
tOFF
Output buffer turn-off delay from OE tOEZ
Data to CAS low delay
tDZC
Data to OE low delay
tDZO
CAS high to data delay
tCDD
OE high to data delay
tODD
0 â 0 â 0 â ns 8
0 10 0 13 0 15 ns 12
0 10 0 13 0 15 ns 12
0 â 0 â 0 â ns 13
0 â 0 â 0 â ns 13
10 â 13 â 15 â ns 14
10 â 13 â 15 â ns 14
Write Cycle
Write command hold time
tWCH
5
â
7
â
10 â
ns
Write command pulse width
tWP
5 â 7 â 10 â ns
Write command setup time
tWCS
0
â
0
â
0
â
ns 15
Write command to RAS lead time tRWL 6 â 8 â 10 â ns
Write command to CAS lead time tCWL 6 â 8 â 10 â ns
Data setup time
tDS
0 â 0 â 0 â ns 16
Data hold time
tDH
5 â 7 â 10 â ns 16
Read-modify-Write Cycle
Read-write cycle time
tRWC
RAS to WE delay time
tRWD
CAS to WE delay time
tCWD
Column address to WE delay time tAWD
OE command hold time
tOEH
89 â
52 â
22 â
32 â
5â
109 â
65 â
28 â
40 â
7â
133 â
77 â
32 â
47 â
10 â
ns
ns 15
ns 15
ns 15
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time tHPC
Access time from CAS precharge tCPA
Output data hold time
tCOH
16 â 20 â 24 â ns
â 22 â 27 â 32 ns 7
3 â 5 â 5 â ns
Semiconductor Group
10
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