ZXTP2008G_16 Datasheet, PDF (5/7 Pages) Diodes Incorporated – 30V PNP LOW SATURATION TRANSISTOR

ZXTP2008G
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1
Tamb=25°C
100m
I /I =50
CB
I /I =20
CB
10m
I /I =10
CB
1m
-¹I^0m Colle¹c⁰t⁰o^mr Curre¹nt (A) ¹⁰
C
V
vI
CE(SAT) C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
100°C
V =1V 250
CE
225
200
175
25°C
150
125
100
-55°C
75
50
25
10m 100m
1
0
10
- I Collector Current (A)
C
h vI
FE C
1.4
V =1V
CE
1.2
1.0
25°C
0.8
-55°C
0.6
0.4
1m
100°C
10m
100m
1
10
- I Collector Current (A)
C
V vI
BE(ON) C
0.5
I /I =10
CB
0.4
0.3
0.2
0.1
0.0
10m
100°C
25°C
-55°C
100m
1
10
- I Collector Current (A)
C
V
vI
CE(SAT) C
1.4
I /I =10
CB
1.2
1.0
25°C
0.8
-55°C
0.6
0.4
1m
100°C
10m
100m
1
10
- I Collector Current (A)
C
V
vI
BE(SAT) C
ZXTP2008G
Document number: DS33708 Rev. 2 - 2
5 of 7
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December 2015
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