ZXTP2008G_16 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 30V PNP LOW SATURATION TRANSISTOR

ZXTP2008G
Thermal Characteristics and Derating Information
V
10
CE(sat)
Limit
1
DC
100m
1s
100ms
10ms
Single Pulse. T =25°C
amb
10m
See note (5)
1ms
100µs
100m
1
10
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
3.0
2.5
See note (5)
2.0
1.5
1.0
See note (6)
0.5
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
40 _{See note (5)}
30
D=0.5
20
D=0.2
10
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
See note (5)
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTP2008G
Document number: DS33708 Rev. 2 - 2
3 of 7
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December 2015
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