ZXTP07012EFF Datasheet, PDF (4/7 Pages) Zetex Semiconductors – 12V, SOT23F, PNP medium power transistor

ZXTP07012EFF
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 11)
Static Forward Current Transfer Ratio
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Min Typ
-12
-23
-12
-16
-7
-8.4
—
<1
—
—
<1
500 750
400 570
230 320
150 210
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
VCE(SAT)
VBE(SAT)
VBE(ON)
-80
-60
—
-130
-250
-260
—
-945
—
-850
Transition Frequency
fT
100
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
CIBO
—
COBO
—
tD
—
tR
—
tS
—
tF
—
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
250
223
49
12.8
15.6
240
92.8
Max
—
—
—
-50
-20
-50
1500
—
—
—
-100
-75
-165
-350
-340
-1050
-950
—
—
60
—
—
—
—
Unit
Test Condition
V I_C = -100µA
V I_C = -10mA
V I_E = -100µA
nA VCB = -10V
µA _{VCB = -10V, TA = +100°C}
nA V_EB = -5.6V
IC = -10mA, VCE = -2V
—
IC = -1A, VCE = -2V
IC = -4A, VCE = -2V
IC = -6A, VCE = -2V
IC = -0.5A, IB = -2.5mA
IC = -1A, IB = -100mA
mV I_C = -1A, I_B = -5mA
IC = -2A, IB = -10mA
IC = -4A, IB = -80mA
mV I_C = -4A, I_B = -80mA
mV I_C = -4A, V_CE = -2V
MHz
pF
pF
ns
ns
ns
ns
IC = -50mA, VCE = -5V,
f = 50MHz
VEB = -0.5V, f = 1MHz
VCB = -8V, f = 1MHz
VCC = -10V,
IC = -500mA,
IB1 = IB2 = -50mA
ZXTP07012EFF
Document number: DS33727 Rev. 3 - 2
4 of 7
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January 2016
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